Diffusion-Wave Diagnostic Technologies, in conjunction with CADIPT ( has produced the following Journal Publications and Conference Proceedings:

  1. Infrared photocarrier radiometry of semiconductors: Physical principles, quantitative depth profilometry, and scanning imaging of deep subsurface electronic defects. A. Mandelis, J. Batista, and D. Shaughnessy. Physical Review B 67, 205208 (2003).
  2. Temperature dependence of carrier mobility in Si wafers measured by infrared photocarrier radiometry. A. Mandelis, J. Batista, and D. Shaughnessy. Applied Physics Letter 82, 23 (2003).
  3. M. E. Rodriguez, J. A. Garcia, A. Mandelis, C. Jean and Y. Riopel, “Kinetics of Surface-State Laser Annealing in Si Frequency-Swept Infrared Photothermal Radiometry”.
    Appl. Phys. Lett. 74, Number 17, 2429-2431, 26 April 1999.
    4. T. Ikari, A. Salnick and A. Mandelis,”Theoretical and Experimental Aspects of Three-Dimensional Infrared Photothermal Radiometry of Semiconductors”.
    J. Appl. Phys. 85, Number 10, 7392-7397, 15 May 1999.
  4. A. Salnick, A. Mandelis and C. Jean,”Infrared
    Photothermal Radiometric Deep-Level Transient Spectroscopy of Shallow B+ Dopant States in p-Si”.
    Appl. Phys. Lett. 71, No. 18, 2671-2673, November 1997.
  5. A. Salnick, A. Mandelis and C. Jean, “Detection of Silicon Wafer Contamination by Lifetime Measurement Using Infrared Photothermal Radiometry”,
    Phys. Stat. Solidi (a) Rapid Research Note 163, No. 1, R5-R6, September 1997.
  6. A. Othonos, A. Salnick, A. Mandelis and C. Christofides, “Noncontact Carrier Lifetime Depth-Profiling of Ion-Implanted Si Using Photothermal Radiometry”.
    Phys. Stat. Solidi (a) Rapid Research Note 161, R13-R14, 1997.
  7. (Invited Review Paper) A. Mandelis, “Laser Infrared Photothermal Radiometry of Semiconductors: Principles and Applications to Solid-State Electronics”,
    Solid-State Electron. 42, No. 1, 1-15, 1998.
  8. (Invited) J. Shen, A. Mandelis and T.
    Ashe,”Pyroelectric Thermal-Wave Resonant Cavity: A Precision Thermal Diffusivity Sensor for Gases and Vapors”,
    Int. J. Thermophys. 19, No. 2, 579-593, 1998.
  9. A. Salnick, A. Mandelis, H. Ruda and C. Jean, “Relative Sensitivity of Photomodulated Reflectance and Photothermal Infrared Radiometry to Thermal and Carrier Plasma Waves in Semiconductors”,
    J. Appl. Phys. 82., No. 4, 1853-1859, August 1997.
  10. A. Salnick, A. Mandelis, F. Funak and C. Jean, “Monitoring of ion Implantation in Si with Carrier Plasma Waves Using Infrared Photothermal Radiometry”,
    Appl. Phys. Lett. 71, No. 11, 1531-1533, September 1997.
  11. A. Salnick, C. Jean and A. Mandelis, “Noncontacting Photothermal Radiometry of SiO2/Si MOS Capacitor Structures”.
    Solid State Electron 41 (4), 591-597 (1997).
  12. A. Mandelis and R.E. Wagner, “Quantitative Photo-Thermo-Modulated Optical Reflectance Studies of Crystalline and Ion-Implanted Germanium”.
    Jpn. J. Appl. Phys. 35 , 1786-1797, March 1996.
  13. A. Salnick, A. Mandelis and C. Jean, “Non-Contact Measurement of Transport Properties of Long Bulk-Lifetime Si Wafers using Photothermal Radiometry”.
    Appl. Phys. Lett. 69 (17), 2522-2524 , October 21, 1996.
  14. A. Salnick, and A. Mandelis, “Hamiltonian Plasma-Harmonic Oscillator Theory: Generalized Depth Profilometry of Electronically Continuously Inhomogeneous Semiconductors and the Inverse Problem”.
    J. Appl. Phys. 80 (9), 5278-5288 , November 1, 1996.
  15. A. Othonos, C. Christofides and A. Mandelis, “Photothermal Radiometric Investigation of Implanted Silicon: The Influence of Dose and Thermal Annealing”.
    Appl. Phys. Lett. 69 (6), 821-823, August 5, 1996.