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Diffusion-Wave Diagnostic Technologies, in conjunction with CADIPT (https://cadipt.mie.utoronto.ca/publications/) has produced the following Journal Publications and Conference Proceedings:
- Infrared photocarrier radiometry of semiconductors: Physical principles, quantitative depth profilometry, and scanning imaging of deep subsurface electronic defects. A. Mandelis, J. Batista, and D. Shaughnessy. Physical Review B 67, 205208 (2003).
- Temperature dependence of carrier mobility in Si wafers measured by infrared photocarrier radiometry. A. Mandelis, J. Batista, and D. Shaughnessy. Applied Physics Letter 82, 23 (2003).
- M. E. Rodriguez, J. A. Garcia, A. Mandelis, C. Jean and Y. Riopel, “Kinetics of Surface-State Laser Annealing in Si Frequency-Swept Infrared Photothermal Radiometry”.
Appl. Phys. Lett. 74, Number 17, 2429-2431, 26 April 1999.
4. T. Ikari, A. Salnick and A. Mandelis,”Theoretical and Experimental Aspects of Three-Dimensional Infrared Photothermal Radiometry of Semiconductors”.
J. Appl. Phys. 85, Number 10, 7392-7397, 15 May 1999.
- A. Salnick, A. Mandelis and C. Jean,”Infrared
Photothermal Radiometric Deep-Level Transient Spectroscopy of Shallow B+ Dopant States in p-Si”.
Appl. Phys. Lett. 71, No. 18, 2671-2673, November 1997.
- A. Salnick, A. Mandelis and C. Jean, “Detection of Silicon Wafer Contamination by Lifetime Measurement Using Infrared Photothermal Radiometry”,
Phys. Stat. Solidi (a) Rapid Research Note 163, No. 1, R5-R6, September 1997.
- A. Othonos, A. Salnick, A. Mandelis and C. Christofides, “Noncontact Carrier Lifetime Depth-Profiling of Ion-Implanted Si Using Photothermal Radiometry”.
Phys. Stat. Solidi (a) Rapid Research Note 161, R13-R14, 1997.
- (Invited Review Paper) A. Mandelis, “Laser Infrared Photothermal Radiometry of Semiconductors: Principles and Applications to Solid-State Electronics”,
Solid-State Electron. 42, No. 1, 1-15, 1998.
- (Invited) J. Shen, A. Mandelis and T.
Ashe,”Pyroelectric Thermal-Wave Resonant Cavity: A Precision Thermal Diffusivity Sensor for Gases and Vapors”,
Int. J. Thermophys. 19, No. 2, 579-593, 1998.
- A. Salnick, A. Mandelis, H. Ruda and C. Jean, “Relative Sensitivity of Photomodulated Reflectance and Photothermal Infrared Radiometry to Thermal and Carrier Plasma Waves in Semiconductors”,
J. Appl. Phys. 82., No. 4, 1853-1859, August 1997.
- A. Salnick, A. Mandelis, F. Funak and C. Jean, “Monitoring of ion Implantation in Si with Carrier Plasma Waves Using Infrared Photothermal Radiometry”,
Appl. Phys. Lett. 71, No. 11, 1531-1533, September 1997.
- A. Salnick, C. Jean and A. Mandelis, “Noncontacting Photothermal Radiometry of SiO2/Si MOS Capacitor Structures”.
Solid State Electron 41 (4), 591-597 (1997).
- A. Mandelis and R.E. Wagner, “Quantitative Photo-Thermo-Modulated Optical Reflectance Studies of Crystalline and Ion-Implanted Germanium”.
Jpn. J. Appl. Phys. 35 , 1786-1797, March 1996.
- A. Salnick, A. Mandelis and C. Jean, “Non-Contact Measurement of Transport Properties of Long Bulk-Lifetime Si Wafers using Photothermal Radiometry”.
Appl. Phys. Lett. 69 (17), 2522-2524 , October 21, 1996.
- A. Salnick, and A. Mandelis, “Hamiltonian Plasma-Harmonic Oscillator Theory: Generalized Depth Profilometry of Electronically Continuously Inhomogeneous Semiconductors and the Inverse Problem”.
J. Appl. Phys. 80 (9), 5278-5288 , November 1, 1996.
- A. Othonos, C. Christofides and A. Mandelis, “Photothermal Radiometric Investigation of Implanted Silicon: The Influence of Dose and Thermal Annealing”.
Appl. Phys. Lett. 69 (6), 821-823, August 5, 1996.